大规模并行TDDB测试:SiC功率器件

2015 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 2015-10-01 DOI:10.1109/IIRW.2015.7437075

Z. Chbili, J. Chbili, J. Campbell, J. Ryan, M. Lahbabi, D. Ioannou, K. Cheung

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引用次数: 3

摘要

本文提出了一种新的晶圆级TDDB测试实验装置。大规模并行可靠性系统能够同时测试3000个探头。该系统可以在高达400°C的高温应用(SiC)下进行测试。我们还展示了SiO2在SiC上的TDDB结果，与SiO2在Si上相比，SiO2在SiC上的TDDB寿命和场加速度更高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Massively parallel TDDB testing: SiC power devices

This paper presents a novel experimental setup to perform wafer level TDDB testing. The massively parallel reliability system is capable of testing a total of 3000 probes simultaneously. The system can perform tests at temperatures up to 400 °C for high temperature applications (SiC). We also present TDDB results of SiO2 on SiC showing higher TDDB lifetime and field acceleration compared to SiO2 on Si.

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2015 IEEE International Integrated Reliability Workshop (IIRW)

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