调节阈值电压，通过缩小翅片结构宽度实现增强模式的InGaAs高电子迁移率晶体管(fin- hemt)

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126487

Shun-Cheng Yang, Cheng-Jia Dai, Li-Cheng Chang, C. Wu

{"title":"调节阈值电压，通过缩小翅片结构宽度实现增强模式的InGaAs高电子迁移率晶体管(fin- hemt)","authors":"Shun-Cheng Yang, Cheng-Jia Dai, Li-Cheng Chang, C. Wu","doi":"10.1109/EDSSC.2017.8126487","DOIUrl":null,"url":null,"abstract":"In this work, we demonstrate a way to modulate threshold voltage of InGaAs Fin-structured High-electron-mobility transistors (Fin-HEMTs) by narrowing fin width of the devices. Normally-off InGaAs FinHEMT has been successfully achieved when fin width of devices is smaller than around 180 nm. Also, we introduce a theory to explain side wall gates control of FinHEMTs to modulate threshold voltage.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modulate threshold voltage to achieve enhancement mode fin-structured InGaAs high electron mobility transistors (fin-HEMTs) through narrowing fin structure's width\",\"authors\":\"Shun-Cheng Yang, Cheng-Jia Dai, Li-Cheng Chang, C. Wu\",\"doi\":\"10.1109/EDSSC.2017.8126487\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we demonstrate a way to modulate threshold voltage of InGaAs Fin-structured High-electron-mobility transistors (Fin-HEMTs) by narrowing fin width of the devices. Normally-off InGaAs FinHEMT has been successfully achieved when fin width of devices is smaller than around 180 nm. Also, we introduce a theory to explain side wall gates control of FinHEMTs to modulate threshold voltage.\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8126487\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126487","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在这项工作中，我们展示了一种通过缩小器件的鳍宽来调制InGaAs鳍结构高电子迁移率晶体管(fin - hemt)阈值电压的方法。当器件的翅片宽度小于180nm左右时，已成功地实现了正常关闭的InGaAs FinHEMT。此外，我们还介绍了一种理论来解释finhemt的侧壁门控制来调制阈值电压。

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Modulate threshold voltage to achieve enhancement mode fin-structured InGaAs high electron mobility transistors (fin-HEMTs) through narrowing fin structure's width

In this work, we demonstrate a way to modulate threshold voltage of InGaAs Fin-structured High-electron-mobility transistors (Fin-HEMTs) by narrowing fin width of the devices. Normally-off InGaAs FinHEMT has been successfully achieved when fin width of devices is smaller than around 180 nm. Also, we introduce a theory to explain side wall gates control of FinHEMTs to modulate threshold voltage.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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