{"title":"一种高增益垂直通道控制晶闸管","authors":"B. Wessels, B. Baliga","doi":"10.1109/IEDM.1977.189151","DOIUrl":null,"url":null,"abstract":"A new vertical channel field controlled thyristor structure is described. This device has a surface grid structure with a high channel length to width aspect ratio which simultaneously allows achieving high blocking gains and fast gate turn-off capability. The devices have the capability of blocking more than 1000 volts with an applied grid bias of 32 volts, and simultaneously exhibiting a low forward voltage drop in the on-state. In addition, the surface grid structure allows gate turn-off capability with a cathode current turn-off time of less than 0.5 microseconds.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A high gain vertical channel controlled thyristor\",\"authors\":\"B. Wessels, B. Baliga\",\"doi\":\"10.1109/IEDM.1977.189151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new vertical channel field controlled thyristor structure is described. This device has a surface grid structure with a high channel length to width aspect ratio which simultaneously allows achieving high blocking gains and fast gate turn-off capability. The devices have the capability of blocking more than 1000 volts with an applied grid bias of 32 volts, and simultaneously exhibiting a low forward voltage drop in the on-state. In addition, the surface grid structure allows gate turn-off capability with a cathode current turn-off time of less than 0.5 microseconds.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189151\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new vertical channel field controlled thyristor structure is described. This device has a surface grid structure with a high channel length to width aspect ratio which simultaneously allows achieving high blocking gains and fast gate turn-off capability. The devices have the capability of blocking more than 1000 volts with an applied grid bias of 32 volts, and simultaneously exhibiting a low forward voltage drop in the on-state. In addition, the surface grid structure allows gate turn-off capability with a cathode current turn-off time of less than 0.5 microseconds.
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