直接带隙Ge0.85Sn0.15室温气体传感光电二极管

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141903

C. Cardoux, L. Casiez, M. Frauenrath, N. Pauc, V. Calvo, J. Hartmann, N. Coudurier, P. Rodriguez, P. Grosse, C. Constancias, O. Lartigue, P. Barritault, O. Gravrand, A. Chelnokov, V. Reboud

{"title":"直接带隙Ge0.85Sn0.15室温气体传感光电二极管","authors":"C. Cardoux, L. Casiez, M. Frauenrath, N. Pauc, V. Calvo, J. Hartmann, N. Coudurier, P. Rodriguez, P. Grosse, C. Constancias, O. Lartigue, P. Barritault, O. Gravrand, A. Chelnokov, V. Reboud","doi":"10.1109/SiPhotonics55903.2023.10141903","DOIUrl":null,"url":null,"abstract":"Ge<inf>0.85</inf>Sn<inf>0.15</inf>-based stacks were grown by reduced pressure chemical vapor deposition on 200 mm Si wafers. The resulting photodiodes showed detectivities above 108cm.H<inf>z</inf>1/2.W−1 at 1.55 µm and a cutoff wavelength of 3.5 µm. This detection range opens up promising perspectives for future all-group-IV gas sensors.","PeriodicalId":105710,"journal":{"name":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Direct Band Gap Ge0.85Sn0.15 Photodiodes for Room Temperature Gas Sensing\",\"authors\":\"C. Cardoux, L. Casiez, M. Frauenrath, N. Pauc, V. Calvo, J. Hartmann, N. Coudurier, P. Rodriguez, P. Grosse, C. Constancias, O. Lartigue, P. Barritault, O. Gravrand, A. Chelnokov, V. Reboud\",\"doi\":\"10.1109/SiPhotonics55903.2023.10141903\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ge<inf>0.85</inf>Sn<inf>0.15</inf>-based stacks were grown by reduced pressure chemical vapor deposition on 200 mm Si wafers. The resulting photodiodes showed detectivities above 108cm.H<inf>z</inf>1/2.W−1 at 1.55 µm and a cutoff wavelength of 3.5 µm. This detection range opens up promising perspectives for future all-group-IV gas sensors.\",\"PeriodicalId\":105710,\"journal\":{\"name\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiPhotonics55903.2023.10141903\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiPhotonics55903.2023.10141903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用化学气相沉积法在200 mm硅片上制备了ge0.85 sn0.15基晶片。所得的光电二极管显示出108cm.Hz1/2以上的探测能力。W−1波长为1.55µm，截止波长为3.5µm。这种探测范围为未来的全iv族气体传感器开辟了广阔的前景。

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Direct Band Gap Ge0.85Sn0.15 Photodiodes for Room Temperature Gas Sensing

Ge0.85Sn0.15-based stacks were grown by reduced pressure chemical vapor deposition on 200 mm Si wafers. The resulting photodiodes showed detectivities above 10⁸cm.Hz^1/2.W⁻¹ at 1.55 µm and a cutoff wavelength of 3.5 µm. This detection range opens up promising perspectives for future all-group-IV gas sensors.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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