{"title":"一类5 - 6 GHz 10w GaN-on-SiC放大器","authors":"K. Tran, Richard Martin","doi":"10.1109/WMCAS.2016.7577496","DOIUrl":null,"url":null,"abstract":"A Class-F 5 - 6 GHz 10 W Power Amplifier was designed with Qorvo's T2G6000528-Q3 GaN transistor using a model developed by Modelithics™. The core of this device is a 10-W die constructed with Qorvo's proven QGaN25 production process that is optimized for high power density and drain efficiency. The optimization design process involves producing model load-pull contours to identify area of loading termination for optimal power and efficiency, and simultaneously proper second-harmonic termination for high-efficiency. 5 amplifiers were built and tested. Test results showed excellent 3dB-compression performance with drain efficiency ranging from 60 to 79.5% and power above 10 W.","PeriodicalId":227955,"journal":{"name":"2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A class-F 5 – 6 GHz 10-W GaN-on-SiC amplifier\",\"authors\":\"K. Tran, Richard Martin\",\"doi\":\"10.1109/WMCAS.2016.7577496\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Class-F 5 - 6 GHz 10 W Power Amplifier was designed with Qorvo's T2G6000528-Q3 GaN transistor using a model developed by Modelithics™. The core of this device is a 10-W die constructed with Qorvo's proven QGaN25 production process that is optimized for high power density and drain efficiency. The optimization design process involves producing model load-pull contours to identify area of loading termination for optimal power and efficiency, and simultaneously proper second-harmonic termination for high-efficiency. 5 amplifiers were built and tested. Test results showed excellent 3dB-compression performance with drain efficiency ranging from 60 to 79.5% and power above 10 W.\",\"PeriodicalId\":227955,\"journal\":{\"name\":\"2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMCAS.2016.7577496\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMCAS.2016.7577496","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Class-F 5 - 6 GHz 10 W Power Amplifier was designed with Qorvo's T2G6000528-Q3 GaN transistor using a model developed by Modelithics™. The core of this device is a 10-W die constructed with Qorvo's proven QGaN25 production process that is optimized for high power density and drain efficiency. The optimization design process involves producing model load-pull contours to identify area of loading termination for optimal power and efficiency, and simultaneously proper second-harmonic termination for high-efficiency. 5 amplifiers were built and tested. Test results showed excellent 3dB-compression performance with drain efficiency ranging from 60 to 79.5% and power above 10 W.
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