采用晶圆键合封装的窄触隙可靠RF-MEMS压电开关

2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI:10.1109/MWSYM.2013.6697667

T. Nakatani, T. Katsuki, H. Okuda, O. Toyoda, S. Ueda, F. Nakazawa

{"title":"采用晶圆键合封装的窄触隙可靠RF-MEMS压电开关","authors":"T. Nakatani, T. Katsuki, H. Okuda, O. Toyoda, S. Ueda, F. Nakazawa","doi":"10.1109/MWSYM.2013.6697667","DOIUrl":null,"url":null,"abstract":"This paper presents a low-cost packaged and reliable piezoelectric-actuated RF-MEMS switch for mobile communications. We fabricated a stiff single crystal silicon (SCS) beam that has an actuator and a contact bump on an SOI wafer without backside etching. We bonded the wafer to a ceramic cap wafer, directly packaging a switch with a contact gap of 0.5-μm not using sacrificial layers. The switch operated up to 1 billion cycles keeping a low insertion loss (<;0.4 dB up to 5GHz) at 20-V driving voltage. The surface mountable SPST switch was 1.6 × 1.1 × 0.8 mm in size.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Piezoelectric reliable RF-MEMS switch with narrow contact-gap using wafer-bond packaging\",\"authors\":\"T. Nakatani, T. Katsuki, H. Okuda, O. Toyoda, S. Ueda, F. Nakazawa\",\"doi\":\"10.1109/MWSYM.2013.6697667\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low-cost packaged and reliable piezoelectric-actuated RF-MEMS switch for mobile communications. We fabricated a stiff single crystal silicon (SCS) beam that has an actuator and a contact bump on an SOI wafer without backside etching. We bonded the wafer to a ceramic cap wafer, directly packaging a switch with a contact gap of 0.5-μm not using sacrificial layers. The switch operated up to 1 billion cycles keeping a low insertion loss (<;0.4 dB up to 5GHz) at 20-V driving voltage. The surface mountable SPST switch was 1.6 × 1.1 × 0.8 mm in size.\",\"PeriodicalId\":128968,\"journal\":{\"name\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2013.6697667\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

提出了一种低成本封装、可靠的压电驱动RF-MEMS移动通信开关。我们在SOI晶圆上制造了一种刚性单晶硅(SCS)光束，该光束具有致动器和接触凸点，没有背面蚀刻。我们将晶圆粘合到陶瓷帽晶圆上，直接封装了一个接触间隙为0.5 μm的开关，而不使用牺牲层。在20v驱动电压下，开关工作高达10亿次，保持低插入损耗(< 0.4 dB，高达5GHz)。表面贴装的SPST开关尺寸为1.6 × 1.1 × 0.8 mm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Piezoelectric reliable RF-MEMS switch with narrow contact-gap using wafer-bond packaging

This paper presents a low-cost packaged and reliable piezoelectric-actuated RF-MEMS switch for mobile communications. We fabricated a stiff single crystal silicon (SCS) beam that has an actuator and a contact bump on an SOI wafer without backside etching. We bonded the wafer to a ceramic cap wafer, directly packaging a switch with a contact gap of 0.5-μm not using sacrificial layers. The switch operated up to 1 billion cycles keeping a low insertion loss (<;0.4 dB up to 5GHz) at 20-V driving voltage. The surface mountable SPST switch was 1.6 × 1.1 × 0.8 mm in size.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

自引率

0.00%

发文量