{"title":"一种新颖的带凹槽和弯曲的RF MEMS并联开关设计","authors":"M. Hassan, F. A. Tahir, H. Rahman","doi":"10.1109/ICET.2014.7021028","DOIUrl":null,"url":null,"abstract":"The paper presents the design of an RF MEMS capacitive shunt switch with the use of dimples and meanders. With optimized meander structure and the use of two dimples below the bridge, the switch presents excellent RF performance. The EM modeling and results are achieved in HFSS and the mechanical modeling and stress analysis is done in ANSYS. The bridge structure with dimples and meanders shows the insertion loss to be less than 0.09 dB up to 35GHz and the isolation as high as 29 dB up to 40GHz. The calculated actuation voltage is 59V.","PeriodicalId":325890,"journal":{"name":"2014 International Conference on Emerging Technologies (ICET)","volume":"282 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A novel design of RF MEMS shunt switch with dimples and meanders\",\"authors\":\"M. Hassan, F. A. Tahir, H. Rahman\",\"doi\":\"10.1109/ICET.2014.7021028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the design of an RF MEMS capacitive shunt switch with the use of dimples and meanders. With optimized meander structure and the use of two dimples below the bridge, the switch presents excellent RF performance. The EM modeling and results are achieved in HFSS and the mechanical modeling and stress analysis is done in ANSYS. The bridge structure with dimples and meanders shows the insertion loss to be less than 0.09 dB up to 35GHz and the isolation as high as 29 dB up to 40GHz. The calculated actuation voltage is 59V.\",\"PeriodicalId\":325890,\"journal\":{\"name\":\"2014 International Conference on Emerging Technologies (ICET)\",\"volume\":\"282 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Emerging Technologies (ICET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICET.2014.7021028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Emerging Technologies (ICET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICET.2014.7021028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel design of RF MEMS shunt switch with dimples and meanders
The paper presents the design of an RF MEMS capacitive shunt switch with the use of dimples and meanders. With optimized meander structure and the use of two dimples below the bridge, the switch presents excellent RF performance. The EM modeling and results are achieved in HFSS and the mechanical modeling and stress analysis is done in ANSYS. The bridge structure with dimples and meanders shows the insertion loss to be less than 0.09 dB up to 35GHz and the isolation as high as 29 dB up to 40GHz. The calculated actuation voltage is 59V.
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