Comparative computational study of LD-HfO2 and TiO2 as layered dilectrics in RRAM

The development of Resistive Ram (RRAM) has been greatly promising and has emerged as highly reliable nonvolatile memory. The biasing of the device creates the filament formation that is due to the moving charge and shallow localized charge. However, the conduction mechanism of resistive switching changes considerably depending on the type of the material used in the dielectric layer and the electrode. Amongst the important mechanism initiating the filament formation in the device, we have mentioned about Space Charge Limited Conduction (SCLC) and F-N tunneling in our work particularly considering the development of conductive filament (CF) with the interest in the I-V characteristics of the device. The RRAM device has huge potential and many advantages over other non-volatile technology i.e. high switching speed, high device density and low power consumption. In this paper we have considered LD (low-dimensional) forms of HfO2 and TiO2 dielectrics for applications in RRAM (Resistive Random Access Memory) devices. The retention of memory device is determined by its saturation curve, HfO2 showed slower saturation at −18mA providing higher retention factor than. The faster decrease in curve for HfO2 based RRAM at −19mA, promoting low power consumption of memory device. Therefore we have obtained that the retention and power consumption of HfO2 is better than the TiO2.