{"title":"在COMS兼容Si(001)和SOI平台上单片生长具有1300 nm和1550 nm强发射的InAs量子点","authors":"Wenqi Wei, Ting Wang, Jianjun Zhang","doi":"10.1109/GROUP4.2019.8925748","DOIUrl":null,"url":null,"abstract":"Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on U-shape patterned Si (001) and SOI substrates. With in-situ III-V growth on such substrates by the III-V/IV dual chamber molecular beam epitaxy, high-quality GaAs layers are obtained with threading dislocation density approximately ∼ 106 cm−2 via electron channeling contrast image (ECCI) method. Then strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are both achieved on Si (001) and SOI substrates, respectively.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"255 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InAs QDs Monolithically Grown on COMS Compatible Si (001) and SOI Platform with Strong Emission at 1300 nm and 1550 nm\",\"authors\":\"Wenqi Wei, Ting Wang, Jianjun Zhang\",\"doi\":\"10.1109/GROUP4.2019.8925748\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on U-shape patterned Si (001) and SOI substrates. With in-situ III-V growth on such substrates by the III-V/IV dual chamber molecular beam epitaxy, high-quality GaAs layers are obtained with threading dislocation density approximately ∼ 106 cm−2 via electron channeling contrast image (ECCI) method. Then strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are both achieved on Si (001) and SOI substrates, respectively.\",\"PeriodicalId\":221282,\"journal\":{\"name\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"volume\":\"255 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2019.8925748\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2019.8925748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InAs QDs Monolithically Grown on COMS Compatible Si (001) and SOI Platform with Strong Emission at 1300 nm and 1550 nm
Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on U-shape patterned Si (001) and SOI substrates. With in-situ III-V growth on such substrates by the III-V/IV dual chamber molecular beam epitaxy, high-quality GaAs layers are obtained with threading dislocation density approximately ∼ 106 cm−2 via electron channeling contrast image (ECCI) method. Then strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are both achieved on Si (001) and SOI substrates, respectively.
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