{"title":"LTE频段28 4W射频功率放大器的设计与仿真","authors":"S. Ravikumar, N. Nagendra, M. Kothari","doi":"10.1109/I2C2.2017.8321946","DOIUrl":null,"url":null,"abstract":"In this article, an RF power amplifier has been designed and simulated using Advanced Design System (ADS) which can be used as driver amplifier in LTE macrocell base station. The amplifier is designed for LTE band 28 and gives an output power of 36dBm with 1 dB variation over the band of operation from 758 MHz to 803 MHz. The transistor chosen for the design is MW6S004N from NXP. Loadpull method is used for finding the optimum source and load impedances. Matching network is designed using lumped and distributed elements. The results of both lumped matching network amplifier and distributed matching network amplifier are compared.","PeriodicalId":288351,"journal":{"name":"2017 International Conference on Intelligent Computing and Control (I2C2)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design and simulation of 4W RF power amplifier for LTE band 28\",\"authors\":\"S. Ravikumar, N. Nagendra, M. Kothari\",\"doi\":\"10.1109/I2C2.2017.8321946\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, an RF power amplifier has been designed and simulated using Advanced Design System (ADS) which can be used as driver amplifier in LTE macrocell base station. The amplifier is designed for LTE band 28 and gives an output power of 36dBm with 1 dB variation over the band of operation from 758 MHz to 803 MHz. The transistor chosen for the design is MW6S004N from NXP. Loadpull method is used for finding the optimum source and load impedances. Matching network is designed using lumped and distributed elements. The results of both lumped matching network amplifier and distributed matching network amplifier are compared.\",\"PeriodicalId\":288351,\"journal\":{\"name\":\"2017 International Conference on Intelligent Computing and Control (I2C2)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Intelligent Computing and Control (I2C2)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/I2C2.2017.8321946\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Intelligent Computing and Control (I2C2)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/I2C2.2017.8321946","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and simulation of 4W RF power amplifier for LTE band 28
In this article, an RF power amplifier has been designed and simulated using Advanced Design System (ADS) which can be used as driver amplifier in LTE macrocell base station. The amplifier is designed for LTE band 28 and gives an output power of 36dBm with 1 dB variation over the band of operation from 758 MHz to 803 MHz. The transistor chosen for the design is MW6S004N from NXP. Loadpull method is used for finding the optimum source and load impedances. Matching network is designed using lumped and distributed elements. The results of both lumped matching network amplifier and distributed matching network amplifier are compared.
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