片上大信号功率、s参数及波形测量系统

M. Demmler, P. Tasker, M. Schlechtweg
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引用次数: 18

摘要

基于HP 71500A微波跃迁分析仪,开发了一套完整表征40ghz晶体管大信号行为的片上测量系统。利用MTA的矢量测量能力,可以对测量系统进行基次和高次谐波的全矢量校准。由测量数据推导出晶体管端部的误差校正波形。新的分析概念已经被开发出来,用于从大信号射频测量中提取晶体管特性和参数,即与输出特性和射频大信号传输特性相关的射频电流和电压约束。这些参数是在真实射频工作条件下测量的,可以直接与直流或小信号s参数测量结果进行比较。如果大信号射频测量用于高功率晶体管结构的优化和精确的非线性CAD模型的开发,这是必不可少的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On-wafer large signal power, S-parameter and waveform measurement system
An on-wafer measurement system has been developed for the complete characterization of the large signal behavior of transistors up to 40 GHz based on the microwave transition analyzer HP 71500A. The vector measurement capability of the MTA is utilized to allow full vector calibration of the measurement system for the fundamental and the higher harmonics. The error corrected waveforms at the transistor terminals are derived from the measurement data. Novel analysis concepts have been developed for the extraction of transistor characteristics and parameters from large signal RF measurements, i.e., RF current and voltage constraints associated with the output characteristic and the RF large signal transfer characteristic. These parameters, measured under real RF operating conditions, can be compared directly with DC or small signal S-parameter measurements. This is essential if large signal RF measurements are used for the optimization of high power transistor structures and in the development of accurate non-linear CAD models.
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