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等离子体增强金属纳米孔径GaAs VCSEL光学近场探测

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382781
J. Hashizume, F. Koyama
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引用次数: 0

摘要

我们展示了一种用于亚波长光学近场探测的金属纳米孔径GaAs VCSEL，通过在纳米孔径中引入金属纳米粒子，该器件显示出光学近场强度和电压信号的强等离子体增强。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Plasmon enhanced optical near-field probing of metal nano-aperture GaAs VCSEL
We demonstrate a metal nano-aperture GaAs VCSEL for sub-wavelength optical near-filed probing, which exhibits the strong plasmon enhancement of both optical near-field intensity and voltage signals by introducing a metal nano-particle in the nano-aperture.
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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.
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