M. Kudoh, Y. Hoshi, S. Momota, T. Fujihira, K. Sakurai
{"title":"面向未来智能电源模块的电流传感IGBT","authors":"M. Kudoh, Y. Hoshi, S. Momota, T. Fujihira, K. Sakurai","doi":"10.1109/ISPSD.1996.509503","DOIUrl":null,"url":null,"abstract":"The effect of the structure of current sensing IGBT on the temperature dependence of current sensing ratio has been investigated to improve the accuracy of over-current protection in intelligent power modules. The operation physics of the current sensing IGBT analyzed by computer simulation and experimental results of the improved performance of the current sensing IGBT are presented.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Current sensing IGBT for future intelligent power module\",\"authors\":\"M. Kudoh, Y. Hoshi, S. Momota, T. Fujihira, K. Sakurai\",\"doi\":\"10.1109/ISPSD.1996.509503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of the structure of current sensing IGBT on the temperature dependence of current sensing ratio has been investigated to improve the accuracy of over-current protection in intelligent power modules. The operation physics of the current sensing IGBT analyzed by computer simulation and experimental results of the improved performance of the current sensing IGBT are presented.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"100 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current sensing IGBT for future intelligent power module
The effect of the structure of current sensing IGBT on the temperature dependence of current sensing ratio has been investigated to improve the accuracy of over-current protection in intelligent power modules. The operation physics of the current sensing IGBT analyzed by computer simulation and experimental results of the improved performance of the current sensing IGBT are presented.