探索氮化镓作为高功率和高性能半导体的可行替代品:电性能和制造技术的比较研究

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引用次数: 0

摘要

半导体工业一直在寻求开发更紧凑、更快、更便宜的晶体管,以便在同一个芯片中封装更多的功率。这需要开发更小、更高效的半导体,目前每个半导体的尺寸在5-7纳米左右。然而,主要半导体材料硅的局限性正变得越来越明显,促使人们探索其他化合物,氮化镓(GaN)是一个非常有前途的候选者。本文介绍了基于氮化镓的高电子迁移率晶体管(hemt)和集成电路(ic)的概述,它们比基于硅的晶体管具有许多优点。GaN hemt具有更低的导通电阻,更快的器件,更小的电容和更少的功耗,使它们能够维持更高的电压和更快的电流。同时,基于gan的ic具有提高功率转换系统和电路效率的潜力,因为它们能够在同一晶圆上集成功率级和信号级器件。有了基于gan的器件,功率转换可以变得更加高效和经济,开启了功率转换的新时代。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploring Gallium Nitride as a Viable Replacement for High Power and Performance Semiconductors: A Comparative Study of Electrical Properties and Fabrication Techniques
The semiconductor industry is continuously seeking to develop more compact, faster, and less expensive transistors allowing for more power to be packed into the same chip. This requires the development of smaller and more efficient semiconductors that are currently in the range of around 5-7 nanometers each. However, the limitations of silicon, the leading semiconductor material, are becoming more apparent, prompting exploration of other compounds, with a very promising candidate being gallium nitride (GaN). This paper presents an overview of GaN-based high electron mobility transistors (HEMTs) and integrated circuits (ICs), which offer several advantages over silicon-based counterparts. GaN HEMTs have lower on-resistance, faster devices, less capacitance, and less power consumption allowing them to sustain higher voltages and faster current. Meanwhile, GaN-based ICs have the potential to improve the efficiency of power conversion systems and circuits due to their ability to integrate both power-level and signal-level devices on the same wafer. With GaN-based devices, power conversion can become more efficient and cost-effective, ushering a new era for power conversion.
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