18ghz高增益单片集成InP/InGaAs PIN/ hbt接收机

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194423

D. Huber, M. Bitter, R. Bauknecht, T. Morf, C. Bergamaschi, H. Jackel

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引用次数: 3

摘要

我们报道了一种波长为的单片集成InP/InGaAs PIN/ hbt光电接收器的设计、制造和表征。利用HBT的基极层和集电极层来实现光电二极管。三级放大器的通阻为()，整个接收机的光/电带宽为。这对应于的跨阻带宽积，这是迄今为止公布的最高值之一。

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18 GHz high gain monolithically integrated InP/InGaAs PIN/HBT-Receiver

We report on the design, fabrication and characterization of a monolithically integrated InP/InGaAs PIN/HBT-Photoreceiver for a wavelength of . Base and collector layers of the HBT have been used to implement the photodiodes. The three-stage-amplifi erachieves a transimpedance of ( ) and the optical/electrical -bandwidth of the entire receiver is . This corresponds to a transimpedancebandwidth product of , which is one of the highest values published to date.

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27th European Solid-State Device Research Conference

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