OLED凹槽ITO阳极上氧化镍的制备

2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI:10.1109/ISNE.2016.7543387

Wen-Tuan Wu, Ching-Ming Hsu, Wei-Ming Lin, Don-Han Tsai, U-Jin Peng

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引用次数: 0

摘要

研究了氧化镍(NiOx)/凹槽氧化铟锡(ITO)薄膜的光学、电学和表面形态特性，以确定其作为oled阳极的适用性。结果表明，顶部添加NiOx层可以使凹槽ITO表现出略高的光学效果，但会降低其电导率。由于这种NiOx层间嵌式OLED的表面功功能大大提高，显示出更高的电流效率。

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Preparation of nickel oxide on recessed ITO anodes for OLED applications

Optical, electrical and surface morphological properties of nickel oxide (NiOx)/recessed indium tin oxide (ITO) films were examined to realize their suitability for serving as an anode of OLEDs. Results showed that adding a top NiOx layer allows recessed ITO to exhibit slightly higher optical effects but degraded its electrical conductance. Due to the largely elevated surface work function with this NiOx interlayer recessed OLED exhibited improved current efficiency.

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2016 5th International Symposium on Next-Generation Electronics (ISNE)

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