{"title":"包括热效应在内的IGBT通用电气模型","authors":"B. Fatemizadeh, D. Silber","doi":"10.1109/PESC.1993.471939","DOIUrl":null,"url":null,"abstract":"Based on general semiconductor device equations and results of two-dimensional modeling (PISCES), an analytical insulated gate bipolar transistor (IGBT) model has been developed. Temperature effects in the range 250-450 K are considered. The electrical-thermal model has been simplified to a level which enables implementation in general purpose circuit analysis computer programs, such as PSPICE and SABER, for use in the analysis and design of switching circuits.<<ETX>>","PeriodicalId":358822,"journal":{"name":"Proceedings of IEEE Power Electronics Specialist Conference - PESC '93","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"A versatile electrical model for IGBT including thermal effects\",\"authors\":\"B. Fatemizadeh, D. Silber\",\"doi\":\"10.1109/PESC.1993.471939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on general semiconductor device equations and results of two-dimensional modeling (PISCES), an analytical insulated gate bipolar transistor (IGBT) model has been developed. Temperature effects in the range 250-450 K are considered. The electrical-thermal model has been simplified to a level which enables implementation in general purpose circuit analysis computer programs, such as PSPICE and SABER, for use in the analysis and design of switching circuits.<<ETX>>\",\"PeriodicalId\":358822,\"journal\":{\"name\":\"Proceedings of IEEE Power Electronics Specialist Conference - PESC '93\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Power Electronics Specialist Conference - PESC '93\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1993.471939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Power Electronics Specialist Conference - PESC '93","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1993.471939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A versatile electrical model for IGBT including thermal effects
Based on general semiconductor device equations and results of two-dimensional modeling (PISCES), an analytical insulated gate bipolar transistor (IGBT) model has been developed. Temperature effects in the range 250-450 K are considered. The electrical-thermal model has been simplified to a level which enables implementation in general purpose circuit analysis computer programs, such as PSPICE and SABER, for use in the analysis and design of switching circuits.<>
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