InP/InGaAs HBT光电晶体管作为毫米波波段的光电转换器

International Topical Meeting on Microwave Photonics (MWP1997) Pub Date : 1997-09-03 DOI:10.1109/MWP.1997.740288

C. Gonzalez, C. Palma, J. Thuret, J. Benchimol, M. Riet

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引用次数: 5

摘要

提出了一种基于异质结双极晶体管技术(HBT)的光电晶体管的实验研究。开发的HPT在20 GHz时产生14 dl3的内部增益，内部增益截止频率为33 GHz。等效电路分析结果与实验结果吻合较好。

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InP/InGaAs HBT phototransistor as optoelectronic converter up to millimetre-wave bands

We present an experimental study of a phototransistor (HPT) based on the heterojunction bipolar transistor technology (HBT). The developed HPT yields an internal gain of 14 dl3 at 20 GHz with an internal gain cut-off fiequency of 33 GHz. Equivalent circuit analysis shows good agreement with experimental results.

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International Topical Meeting on Microwave Photonics (MWP1997)

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