氢微波等离子体在石墨上沉积金刚石

Jiaqi Zhu, Kaili Yao, B. Dai, V. Ralchenko, Shu Guoyang, Jiwen Zhao, Liu Kang, Lei Yang, A. Bolshakov, Jiecai Han
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引用次数: 4

摘要

氢等离子体刻蚀石墨产生的自由基可用于化学气相沉积(CVD)合成金刚石。研究了氢微波等离子体对多晶石墨的刻蚀、非播种石墨衬底上金刚石颗粒的生长,并对金刚石的形貌、晶粒尺寸分布、生长速率和相纯度进行了表征。石墨衬底同时作为碳源,这是该工艺的具体特征。拉曼光谱显示,由于刻蚀,石墨表面结构的无序性降低。由于石墨刻蚀过程固有的非稳态特性,金刚石的生长速率为3 ~ 5 μm/h,金刚石的质量随生长时间的延长而提高。收稿日期:29-12-2017收稿日期:05-03-2018发布日期:16-08-2018
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Diamond Deposition on Graphite in Hydrogen Microwave Plasma
Hydrogen plasma etching of graphite generates radicals that can be used for diamond synthesis by chemical vapor deposition (CVD). We studied the etching of polycrystalline graphite by a hydrogen microwave plasma, growth of diamond particles of the non-seeded graphite substrates, and characterized the diamond morphology, grain size distribution, growth rate, and phase purity. The graphite substrates served simultaneously as a carbon source, this being the specific feature of the process. A disorder of the graphite surface structure reduces as the result of the etching as revealed with Raman spectroscopy. The diamond growth rate of 3 – 5 μm/h was achieved, the quality of the produced diamond grains improving with growth time due to inherently nonstationary graphite etching process. Received on 29-12-2017 Accepted on 05-03-2018 Published on 16-08-2018
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