基于锗的光控场效应晶体管的仿真

11th International Conference on Group IV Photonics (GFP) Pub Date : 2014-11-24 DOI:10.1109/GROUP4.2014.6961989

S. Rajamani, V. Sorianello, A. De Iacovo, L. Colace

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引用次数: 4

摘要

本文报道了基于锗栅极MOSFET的光控场效应晶体管(OCFET)的仿真。研究了该器件在1.55 μm近红外光下的静态和动态特性，并研究了其作为数字逆变器的工作原理。

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Simulations of Ge based optically controlled field effect transistors

We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.

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11th International Conference on Group IV Photonics (GFP)

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