金属-半导体结构中的传热模型

G. Khlyap, P. Sydorchuk
{"title":"金属-半导体结构中的传热模型","authors":"G. Khlyap, P. Sydorchuk","doi":"10.1109/ASDAM.2002.1088511","DOIUrl":null,"url":null,"abstract":"The paper reports on the first results of heat transfer modeling performed for metal-semiconductor structures based on A/sup 2/B/sup 6/ compounds. Current-voltage dependences were studied and numerically simulated in order to clarify the effect of thermal generation from the metallic contacts regions observed under electric field application. It is shown that one of principal parameters of the current-voltage dependence (determining the mode of operation of an active device), namely the non-ideality factor, is strongly influenced by the heat flowing through the contact regions.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"167 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Heat transfer modeling in metal-semiconductor structures\",\"authors\":\"G. Khlyap, P. Sydorchuk\",\"doi\":\"10.1109/ASDAM.2002.1088511\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper reports on the first results of heat transfer modeling performed for metal-semiconductor structures based on A/sup 2/B/sup 6/ compounds. Current-voltage dependences were studied and numerically simulated in order to clarify the effect of thermal generation from the metallic contacts regions observed under electric field application. It is shown that one of principal parameters of the current-voltage dependence (determining the mode of operation of an active device), namely the non-ideality factor, is strongly influenced by the heat flowing through the contact regions.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"167 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088511\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文报道了基于A/sup 2/B/sup 6/化合物的金属-半导体结构传热模型的初步结果。为了阐明在电场作用下观察到的金属接触区产生热的影响,研究了电流-电压依赖性并进行了数值模拟。结果表明,电流-电压依赖性(决定有源器件的工作模式)的主要参数之一,即非理想性因子,受到流经接触区域的热量的强烈影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Heat transfer modeling in metal-semiconductor structures
The paper reports on the first results of heat transfer modeling performed for metal-semiconductor structures based on A/sup 2/B/sup 6/ compounds. Current-voltage dependences were studied and numerically simulated in order to clarify the effect of thermal generation from the metallic contacts regions observed under electric field application. It is shown that one of principal parameters of the current-voltage dependence (determining the mode of operation of an active device), namely the non-ideality factor, is strongly influenced by the heat flowing through the contact regions.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信