{"title":"一种低电压CMOS比例绝对温度电流基准","authors":"S. Wadhwa","doi":"10.1109/VLSI.Design.2009.18","DOIUrl":null,"url":null,"abstract":"A CMOS low voltage Proportional-to-Absolute Temperature current reference is presented. The proposed circuit can work with supply voltages as low as 1.1V. The circuit is designed in 90nm CMOS technology for 2.2µA reference current at typical corner, 27C, 1.2V. The circuit has been extensively simulated across all possible combinations of MOSFET, Resistor, BJT, supply voltage and temperature variation corners. Simulation results have been given for a wide temperature variation from -40C to 125C and supply voltage variation from 1.1V to 1.3V.","PeriodicalId":267121,"journal":{"name":"2009 22nd International Conference on VLSI Design","volume":"377 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A Low Voltage CMOS Proportional-to-Absolute Temperature Current Reference\",\"authors\":\"S. Wadhwa\",\"doi\":\"10.1109/VLSI.Design.2009.18\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS low voltage Proportional-to-Absolute Temperature current reference is presented. The proposed circuit can work with supply voltages as low as 1.1V. The circuit is designed in 90nm CMOS technology for 2.2µA reference current at typical corner, 27C, 1.2V. The circuit has been extensively simulated across all possible combinations of MOSFET, Resistor, BJT, supply voltage and temperature variation corners. Simulation results have been given for a wide temperature variation from -40C to 125C and supply voltage variation from 1.1V to 1.3V.\",\"PeriodicalId\":267121,\"journal\":{\"name\":\"2009 22nd International Conference on VLSI Design\",\"volume\":\"377 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-01-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 22nd International Conference on VLSI Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI.Design.2009.18\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 22nd International Conference on VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI.Design.2009.18","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Low Voltage CMOS Proportional-to-Absolute Temperature Current Reference
A CMOS low voltage Proportional-to-Absolute Temperature current reference is presented. The proposed circuit can work with supply voltages as low as 1.1V. The circuit is designed in 90nm CMOS technology for 2.2µA reference current at typical corner, 27C, 1.2V. The circuit has been extensively simulated across all possible combinations of MOSFET, Resistor, BJT, supply voltage and temperature variation corners. Simulation results have been given for a wide temperature variation from -40C to 125C and supply voltage variation from 1.1V to 1.3V.
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