H2A:一个强化的异步片上网络

Julian J. H. Pontes, Ney Laert Vilar Calazans, P. Vivet
{"title":"H2A:一个强化的异步片上网络","authors":"Julian J. H. Pontes, Ney Laert Vilar Calazans, P. Vivet","doi":"10.1109/SBCCI.2013.6644865","DOIUrl":null,"url":null,"abstract":"One of the next challenges for asynchronous communication architectures is reliability, in the form of robustness to single event effects, when under the impact of particles generated by ionizing radiation. This occurs because technology down-scaling continuously increases the logic sensitivity of silicon devices to such effects. Contrary to what happens in synchronous circuits, delay variations induced by radiation usually have no impact on asynchronous quasi-delay insensitive (QDI) combinational logic blocks, but in case of storage logic, bit flips may corrupt the circuit state with no recovery solution, even when using asynchronous circuits. This work proposes a new set of hardening techniques against single event effects applicable to asynchronous networks-on-chip. It presents practical case studies of use for these techniques and evaluates them in close to real life situations. Obtained results show that the achieved increase in asynchronous network-on-chip robustness has the potential to leverage this communication architecture solution as the main choice for the next generations of complex silicon devices on advanced nodes technologies such as 32 nm, 28 nm and below.","PeriodicalId":203604,"journal":{"name":"2013 26th Symposium on Integrated Circuits and Systems Design (SBCCI)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"H2A: A hardened asynchronous network on chip\",\"authors\":\"Julian J. H. Pontes, Ney Laert Vilar Calazans, P. Vivet\",\"doi\":\"10.1109/SBCCI.2013.6644865\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"One of the next challenges for asynchronous communication architectures is reliability, in the form of robustness to single event effects, when under the impact of particles generated by ionizing radiation. This occurs because technology down-scaling continuously increases the logic sensitivity of silicon devices to such effects. Contrary to what happens in synchronous circuits, delay variations induced by radiation usually have no impact on asynchronous quasi-delay insensitive (QDI) combinational logic blocks, but in case of storage logic, bit flips may corrupt the circuit state with no recovery solution, even when using asynchronous circuits. This work proposes a new set of hardening techniques against single event effects applicable to asynchronous networks-on-chip. It presents practical case studies of use for these techniques and evaluates them in close to real life situations. Obtained results show that the achieved increase in asynchronous network-on-chip robustness has the potential to leverage this communication architecture solution as the main choice for the next generations of complex silicon devices on advanced nodes technologies such as 32 nm, 28 nm and below.\",\"PeriodicalId\":203604,\"journal\":{\"name\":\"2013 26th Symposium on Integrated Circuits and Systems Design (SBCCI)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 26th Symposium on Integrated Circuits and Systems Design (SBCCI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBCCI.2013.6644865\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 26th Symposium on Integrated Circuits and Systems Design (SBCCI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBCCI.2013.6644865","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

异步通信架构的下一个挑战是可靠性,即在电离辐射产生的粒子的影响下对单事件效应的鲁棒性。这是因为技术的不断缩小增加了硅器件对这种效应的逻辑灵敏度。与同步电路中发生的情况相反,辐射引起的延迟变化通常对异步准延迟不敏感(QDI)组合逻辑块没有影响,但在存储逻辑的情况下,即使使用异步电路,位翻转也可能破坏电路状态而没有恢复方案。这项工作提出了一套新的针对单事件效应的强化技术,适用于异步片上网络。它提出了使用这些技术的实际案例研究,并在接近现实生活的情况下评估它们。所获得的结果表明,异步片上网络鲁棒性的提高有潜力利用这种通信架构解决方案作为先进节点技术(如32nm, 28nm及以下)上下一代复杂硅器件的主要选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
H2A: A hardened asynchronous network on chip
One of the next challenges for asynchronous communication architectures is reliability, in the form of robustness to single event effects, when under the impact of particles generated by ionizing radiation. This occurs because technology down-scaling continuously increases the logic sensitivity of silicon devices to such effects. Contrary to what happens in synchronous circuits, delay variations induced by radiation usually have no impact on asynchronous quasi-delay insensitive (QDI) combinational logic blocks, but in case of storage logic, bit flips may corrupt the circuit state with no recovery solution, even when using asynchronous circuits. This work proposes a new set of hardening techniques against single event effects applicable to asynchronous networks-on-chip. It presents practical case studies of use for these techniques and evaluates them in close to real life situations. Obtained results show that the achieved increase in asynchronous network-on-chip robustness has the potential to leverage this communication architecture solution as the main choice for the next generations of complex silicon devices on advanced nodes technologies such as 32 nm, 28 nm and below.
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