碳纳米管在硅突上的选择性生长

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1116/1.1885008

H. Sato, K. Hata, H. Miyake, K. Hiramatsu, Y. Saito

{"title":"碳纳米管在硅突上的选择性生长","authors":"H. Sato, K. Hata, H. Miyake, K. Hiramatsu, Y. Saito","doi":"10.1116/1.1885008","DOIUrl":null,"url":null,"abstract":"A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Selective growth of carbon nanotubes on silicon protrusions\",\"authors\":\"H. Sato, K. Hata, H. Miyake, K. Hiramatsu, Y. Saito\",\"doi\":\"10.1116/1.1885008\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.\",\"PeriodicalId\":137345,\"journal\":{\"name\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"volume\":\"189 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/1.1885008\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/1.1885008","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

报道了一种制备碳纳米管场发射极阵列的新方法。采用化学气相沉积(等离子体增强CVD和热CVD)和升空工艺在突起顶点上选择性生长CNTs。采用超高真空条件下的电流-电压曲线测量了碳纳米管阵列的场发射特性。结果表明，有Ti缓冲层的TCVD生长的碳纳米管阵列具有最佳的FE特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Selective growth of carbon nanotubes on silicon protrusions

A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

自引率

0.00%

发文量