Yi-Tsung Chang, Ching-Tsang Chang, Wei-Chih Huang, T. Horng
{"title":"石墨烯在非导电衬底中生长的电泳沉积","authors":"Yi-Tsung Chang, Ching-Tsang Chang, Wei-Chih Huang, T. Horng","doi":"10.1109/ISNE.2016.7543320","DOIUrl":null,"url":null,"abstract":"In electrophoretic deposition, the quality of the deposition is closely related to both the electrolyte and electric field intensity. This study involved modifying the traditional electrophoresis setup and adjusting the variables of an experiment to deposit higher quality graphene a non-conductive silicon substrate. With a DC bias of 30 V and a 1 wt% Al2 (SO4)3 electrolytic solutions, the highest amount of graphene and the lowest number of graphene defects can be obtained. The defect ratio ID/IG is approximately 0.95.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"363 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrophoretic deposition of graphene growth in a nonconductive substrate\",\"authors\":\"Yi-Tsung Chang, Ching-Tsang Chang, Wei-Chih Huang, T. Horng\",\"doi\":\"10.1109/ISNE.2016.7543320\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In electrophoretic deposition, the quality of the deposition is closely related to both the electrolyte and electric field intensity. This study involved modifying the traditional electrophoresis setup and adjusting the variables of an experiment to deposit higher quality graphene a non-conductive silicon substrate. With a DC bias of 30 V and a 1 wt% Al2 (SO4)3 electrolytic solutions, the highest amount of graphene and the lowest number of graphene defects can be obtained. The defect ratio ID/IG is approximately 0.95.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"363 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543320\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543320","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrophoretic deposition of graphene growth in a nonconductive substrate
In electrophoretic deposition, the quality of the deposition is closely related to both the electrolyte and electric field intensity. This study involved modifying the traditional electrophoresis setup and adjusting the variables of an experiment to deposit higher quality graphene a non-conductive silicon substrate. With a DC bias of 30 V and a 1 wt% Al2 (SO4)3 electrolytic solutions, the highest amount of graphene and the lowest number of graphene defects can be obtained. The defect ratio ID/IG is approximately 0.95.