石墨烯在非导电衬底中生长的电泳沉积

Yi-Tsung Chang, Ching-Tsang Chang, Wei-Chih Huang, T. Horng
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引用次数: 0

摘要

电泳沉积过程中,沉积质量与电解液和电场强度密切相关。本研究包括修改传统电泳装置和调整实验变量,以在不导电的硅衬底上沉积更高质量的石墨烯。在直流偏置为30 V、Al2 (SO4)3质量分数为1 wt%的电解溶液中,石墨烯含量最高,石墨烯缺陷数量最少。缺陷比ID/IG约为0.95。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrophoretic deposition of graphene growth in a nonconductive substrate
In electrophoretic deposition, the quality of the deposition is closely related to both the electrolyte and electric field intensity. This study involved modifying the traditional electrophoresis setup and adjusting the variables of an experiment to deposit higher quality graphene a non-conductive silicon substrate. With a DC bias of 30 V and a 1 wt% Al2 (SO4)3 electrolytic solutions, the highest amount of graphene and the lowest number of graphene defects can be obtained. The defect ratio ID/IG is approximately 0.95.
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