用于可见光通信矩阵发射极的快速GaN μLED像素

Yoann Seauve, M. Vigier, Thomas Pilloix, G. Sicard
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引用次数: 1

摘要

基于氮化镓(GaN)的发光二极管(led)以其高亮度和高速换流能力而闻名。毫不奇怪,GaN μLED通常用于基于LED的可见光通信(VLC)系统,因为它们可以提供大的调制带宽。虽然VLC发射器通常由单个LED构成,但使用μLED矩阵作为光源可以具有更高的线性度等优点。本文讨论了一种用于矩阵发射体的快速GaN μLED像素驱动器的设计。该像素驱动可以达到333mhz帧速率,其最大偏置电流为384 $\mu\ mathm {a}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fast GaN μLED Pixel for Visible Light Communication Matrix Emitter
Galium nitride (GaN) based Light-emitting diodes (LEDs) are known for their high brightness and high-speed commutation capability. Not surprisingly, GaN μLEDs are often used in LED based visible light communication (VLC) systems, due to the large modulation bandwidth they can offer. Although VLC emitters are commonly built with a single LED, using a matrix of μLED as the light source can have some advantages as higher linearity. In this paper, the design of a fast GaN μLED pixel driver dedicated to matrix emitters is discussed. This pixel driver can reach a 333 Mhz frame rate with its maximum bias current of 384 $\mu\mathrm{A}$.
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