一种新型高击穿电压功率LDMOSFET结构

2014 International Conference on Electronics, Information and Communications (ICEIC) Pub Date : 2014-10-02 DOI:10.1109/ELINFOCOM.2014.6914418

Doohyung Cho, G. Song, Kwangsoo Kim

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引用次数: 1

摘要

本文提出了一种基于无外延层的LD-MOSFET的新型功率MOSFET结构。该器件的击穿电压(BV)比传统LDMOSFET高3.5倍，而电阻不增加。此外，在氧化物周围宽n漂移的影响下，由于电场分布均匀，获得了较高的Isat。本文利用Silvaco T-CAD工具对各器件的电气特性进行分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel power LDMOSFET structure with high breakdown voltage

Novel power MOSFET structure based on LD-MOSFET which has no epitaxial layer is proposed in this paper. The proposed device has the breakdown voltage (BV) as 3.5 times higher than conventional LDMOSFET without increasing the resistance. Also, under the influence of wide n-drift around the oxide, it achieves relatively high Isat due to uniform electric field distribution. In this paper, Silvaco T-CAD tool is utilized to analyze the each device's electrical characteristics.

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2014 International Conference on Electronics, Information and Communications (ICEIC)

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