V. Midili, V. Nodjiadjim, T. Johansen, M. Riet, M. Squartecchia, J. Dupuy, A. Konczykowska
{"title":"毫米波功率放大器用多指InP dhbt的三维热仿真与建模","authors":"V. Midili, V. Nodjiadjim, T. Johansen, M. Riet, M. Squartecchia, J. Dupuy, A. Konczykowska","doi":"10.1109/IMOC.2017.8121069","DOIUrl":null,"url":null,"abstract":"This paper presents the comparison between the simulated and measured thermal resistance of InP Double Heterojunction Bipolar Transistors (DHBT). 3D thermal simulations were carried out in order to compute the temperature distribution across the full structure due to a constant power excitation of devices with up to 8 emitter fingers. The surface temperature profile was then used to compute the average thermal resistance of the multi-finger devices. The comparison with the corresponding results obtained by electrical measurements show a good agreement. The temperature profiles from several simulations are used to extract the thermal resistance matrix used in the electro-thermal coupling network of a compact large-signal model.","PeriodicalId":171284,"journal":{"name":"2017 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)","volume":"363 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"3D thermal simulations and modeling of multi-finger InP DHBTs for millimeter-wave power amplifiers\",\"authors\":\"V. Midili, V. Nodjiadjim, T. Johansen, M. Riet, M. Squartecchia, J. Dupuy, A. Konczykowska\",\"doi\":\"10.1109/IMOC.2017.8121069\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the comparison between the simulated and measured thermal resistance of InP Double Heterojunction Bipolar Transistors (DHBT). 3D thermal simulations were carried out in order to compute the temperature distribution across the full structure due to a constant power excitation of devices with up to 8 emitter fingers. The surface temperature profile was then used to compute the average thermal resistance of the multi-finger devices. The comparison with the corresponding results obtained by electrical measurements show a good agreement. The temperature profiles from several simulations are used to extract the thermal resistance matrix used in the electro-thermal coupling network of a compact large-signal model.\",\"PeriodicalId\":171284,\"journal\":{\"name\":\"2017 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)\",\"volume\":\"363 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMOC.2017.8121069\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMOC.2017.8121069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
3D thermal simulations and modeling of multi-finger InP DHBTs for millimeter-wave power amplifiers
This paper presents the comparison between the simulated and measured thermal resistance of InP Double Heterojunction Bipolar Transistors (DHBT). 3D thermal simulations were carried out in order to compute the temperature distribution across the full structure due to a constant power excitation of devices with up to 8 emitter fingers. The surface temperature profile was then used to compute the average thermal resistance of the multi-finger devices. The comparison with the corresponding results obtained by electrical measurements show a good agreement. The temperature profiles from several simulations are used to extract the thermal resistance matrix used in the electro-thermal coupling network of a compact large-signal model.