一个3mW 12b 10MS/s子范围SAR ADC

Hung-Wei Chen, Yu-Hsun Liu, Yu-Hsiang Lin, Hsin-Shu Chen
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引用次数: 16

摘要

本文提出了一种采用子量程概念实现高功率效率的逐次逼近模数转换器(SAR ADC)。重叠范围大大减轻了粗转换对前6位分辨率的精度要求。在粗转换中产生的错误在剩余的7位精细转换中得到恢复。因此,它大大缩短了电容阵列最有效位(MSB)电容切换的输出稳定时间,这是传统SAR ADC的速度瓶颈。采用0.13 μm CMOS工艺,实现了3mW 12b 10MS/s亚量程SAR ADC。在奈奎斯特输入频率下,原型电路的SNDR达到59.7dB。它占据0.096 mm2的有效芯片面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 3mW 12b 10MS/s sub-range SAR ADC
This paper presents a successive approximation analog-to-digital converter (SAR ADC) achieving high power efficiency by adopting sub-range concept. Overlapping range greatly relieves the accuracy requirement on the first 6 bit resolving in coarse conversion. The error made in the coarse conversion is recovered during the rest 7 bit resolving in fine conversion. Hence, it significantly reduces the capacitor array output settling time of most-significant-bit (MSB) capacitor switching, which is the speed bottleneck for traditional SAR ADC. A 3mW 12b 10MS/s sub-range SAR ADC is realized in 0.13-μm CMOS process. The prototype circuit reaches SNDR 59.7dB at Nyquist input frequency. It occupies an active chip area of 0.096 mm2.
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