考虑层间性能变化的块级单片3d - ic功耗性能研究

Shreepad Panth, K. Samadi, Yang Du, S. Lim
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引用次数: 63

摘要

本文研究了块级单片3D集成电路设计中功耗与性能的权衡。我们的研究表明,我们可以将2D和理论下界之间的功率性能差距缩小50%。我们对非底层的低温制造过程引起的层间性能变化进行了建模。我们还模拟了一种替代制造工艺,其中在底层使用高电阻钨互连,以承受非底层的高温工艺。我们提出了一种变化感知的地板规划技术,使我们的设计更能容忍这些变化。我们证明,我们的设计方法可以帮助我们获得高质量的设计,即使在层间的性能变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power-performance study of block-level monolithic 3D-ICs considering inter-tier performance variations
In this paper we study the power vs. performance tradeoff in block-level monolithic 3D IC designs. Our study shows that we can close the power-performance gap between 2D and a theoretical lower bound by up to 50%. We model the inter-tier performance variations caused by a low temperature manufacturing process on the non-bottom tiers. We also model an alternate manufacturing process, where highly resistive tungsten interconnects are used on the bottom tier to withstand a high temperature process on the non bottom tiers. We propose a variation-aware floorplanning technique that makes our design more tolerant to these variations. We demonstrate that our design methods can help us obtain high quality designs even under inter-tier performance variations.
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