K. Ben Saddik, P. Álamo, J. Lähnemann, R. Volkov, N. Borgardt, T. Flissikowski, O. Brandt, B. J. García, S. Fernández-Garrido
{"title":"化学束外延法在名义(001)取向GaP-on-Si衬底上生长的GaP1−xNx合金的发光特性","authors":"K. Ben Saddik, P. Álamo, J. Lähnemann, R. Volkov, N. Borgardt, T. Flissikowski, O. Brandt, B. J. García, S. Fernández-Garrido","doi":"10.1109/CSW55288.2022.9930454","DOIUrl":null,"url":null,"abstract":"We investigate the optical properties of GaP1−xNx alloys, grown by chemical beam epitaxy (CBE) on (001)-oriented GaP-on-Si substrates, using cathodoluminescence and photoluminescence spectroscopy. In contrast to plasma-assisted molecular beam epitaxy, the optical properties of GaP1−xNx layers grown by CBE are found to be unaffected by ex situ rapid thermal annealing treatments. Regarding the effect of the N mole fraction, the luminescence intensity remains high for compositions up to the lattice match, then it decreases. Temperature-dependent measurements revealed the existence of two independent thermally activated quenching processes as well as the presence of localized states caused by compositional fluctuations. Upon extracting the long-range fluctuation energies, we derived a coupling coefficient value of 2.24 eV to describe the dependence of the band gap energy on x using the band anti-crossing model.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Luminescence properties of GaP1−xNx alloys grown on nominally (001)-oriented GaP-on-Si substrates by chemical beam epitaxy\",\"authors\":\"K. Ben Saddik, P. Álamo, J. Lähnemann, R. Volkov, N. Borgardt, T. Flissikowski, O. Brandt, B. J. García, S. Fernández-Garrido\",\"doi\":\"10.1109/CSW55288.2022.9930454\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the optical properties of GaP1−xNx alloys, grown by chemical beam epitaxy (CBE) on (001)-oriented GaP-on-Si substrates, using cathodoluminescence and photoluminescence spectroscopy. In contrast to plasma-assisted molecular beam epitaxy, the optical properties of GaP1−xNx layers grown by CBE are found to be unaffected by ex situ rapid thermal annealing treatments. Regarding the effect of the N mole fraction, the luminescence intensity remains high for compositions up to the lattice match, then it decreases. Temperature-dependent measurements revealed the existence of two independent thermally activated quenching processes as well as the presence of localized states caused by compositional fluctuations. Upon extracting the long-range fluctuation energies, we derived a coupling coefficient value of 2.24 eV to describe the dependence of the band gap energy on x using the band anti-crossing model.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSW55288.2022.9930454\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930454","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Luminescence properties of GaP1−xNx alloys grown on nominally (001)-oriented GaP-on-Si substrates by chemical beam epitaxy
We investigate the optical properties of GaP1−xNx alloys, grown by chemical beam epitaxy (CBE) on (001)-oriented GaP-on-Si substrates, using cathodoluminescence and photoluminescence spectroscopy. In contrast to plasma-assisted molecular beam epitaxy, the optical properties of GaP1−xNx layers grown by CBE are found to be unaffected by ex situ rapid thermal annealing treatments. Regarding the effect of the N mole fraction, the luminescence intensity remains high for compositions up to the lattice match, then it decreases. Temperature-dependent measurements revealed the existence of two independent thermally activated quenching processes as well as the presence of localized states caused by compositional fluctuations. Upon extracting the long-range fluctuation energies, we derived a coupling coefficient value of 2.24 eV to describe the dependence of the band gap energy on x using the band anti-crossing model.
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