Daniel G. Bae, R. Mandel, S. Dessiatoun, S. Rajgopal, Samantha P. Roberts, M. Mehregany, M. Ohadi
{"title":"利用薄膜蒸发和增强型输送系统(FEEDS)歧管-微通道冷却器在碳化硅(SiC)上实现高热流密度电子器件的嵌入式两相冷却","authors":"Daniel G. Bae, R. Mandel, S. Dessiatoun, S. Rajgopal, Samantha P. Roberts, M. Mehregany, M. Ohadi","doi":"10.1109/ITHERM.2017.7992511","DOIUrl":null,"url":null,"abstract":"This work presents experimental results of a two-phase, embedded cooling system for high heat flux electronics on silicon carbide (SiC) substrates. The system uses a thin-Film Evaporation and Enhanced fluid Delivery System (FEEDS) Manifold-Microchannel (MMC) cooler. SiC-based high power electronics are gaining momentum due to SiC's desirable electrical and thermal performance. For example, single-crystalline SiC shows thermal conductivities exceeding 350 W/m-K, which is several times higher than that of silicon. Accordingly, FEEDS MMC coolers were fabricated and embedded onto SiC substrates by etching deep-trench (with aspect ratios around 5) microchannels into the substrates. Previous studies on FEEDS MMC on silicon have reached high heat fluxes above 1 kW/cm2 at 45% vapor quality with R245fa at 30°C saturation temperature. In comparison, the SiC devices here show better thermal performance, exhibiting cooling of 1 kW/cm2 and up to ∼85% exit vapor quality. The system was also tested with single-phase mode to validate system performance via comparison to CFD simulations, before two-phase tests were performed. Microfabrication of the SiC channels are also discussed.","PeriodicalId":387542,"journal":{"name":"2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"Embedded two-phase cooling of high heat flux electronics on silicon carbide (SiC) using thin-film evaporation and an enhanced delivery system (FEEDS) manifold-microchannel cooler\",\"authors\":\"Daniel G. Bae, R. Mandel, S. Dessiatoun, S. Rajgopal, Samantha P. Roberts, M. Mehregany, M. Ohadi\",\"doi\":\"10.1109/ITHERM.2017.7992511\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents experimental results of a two-phase, embedded cooling system for high heat flux electronics on silicon carbide (SiC) substrates. The system uses a thin-Film Evaporation and Enhanced fluid Delivery System (FEEDS) Manifold-Microchannel (MMC) cooler. SiC-based high power electronics are gaining momentum due to SiC's desirable electrical and thermal performance. For example, single-crystalline SiC shows thermal conductivities exceeding 350 W/m-K, which is several times higher than that of silicon. Accordingly, FEEDS MMC coolers were fabricated and embedded onto SiC substrates by etching deep-trench (with aspect ratios around 5) microchannels into the substrates. Previous studies on FEEDS MMC on silicon have reached high heat fluxes above 1 kW/cm2 at 45% vapor quality with R245fa at 30°C saturation temperature. In comparison, the SiC devices here show better thermal performance, exhibiting cooling of 1 kW/cm2 and up to ∼85% exit vapor quality. The system was also tested with single-phase mode to validate system performance via comparison to CFD simulations, before two-phase tests were performed. Microfabrication of the SiC channels are also discussed.\",\"PeriodicalId\":387542,\"journal\":{\"name\":\"2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ITHERM.2017.7992511\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITHERM.2017.7992511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Embedded two-phase cooling of high heat flux electronics on silicon carbide (SiC) using thin-film evaporation and an enhanced delivery system (FEEDS) manifold-microchannel cooler
This work presents experimental results of a two-phase, embedded cooling system for high heat flux electronics on silicon carbide (SiC) substrates. The system uses a thin-Film Evaporation and Enhanced fluid Delivery System (FEEDS) Manifold-Microchannel (MMC) cooler. SiC-based high power electronics are gaining momentum due to SiC's desirable electrical and thermal performance. For example, single-crystalline SiC shows thermal conductivities exceeding 350 W/m-K, which is several times higher than that of silicon. Accordingly, FEEDS MMC coolers were fabricated and embedded onto SiC substrates by etching deep-trench (with aspect ratios around 5) microchannels into the substrates. Previous studies on FEEDS MMC on silicon have reached high heat fluxes above 1 kW/cm2 at 45% vapor quality with R245fa at 30°C saturation temperature. In comparison, the SiC devices here show better thermal performance, exhibiting cooling of 1 kW/cm2 and up to ∼85% exit vapor quality. The system was also tested with single-phase mode to validate system performance via comparison to CFD simulations, before two-phase tests were performed. Microfabrication of the SiC channels are also discussed.