利用薄膜蒸发和增强型输送系统(FEEDS)歧管-微通道冷却器在碳化硅(SiC)上实现高热流密度电子器件的嵌入式两相冷却

Daniel G. Bae, R. Mandel, S. Dessiatoun, S. Rajgopal, Samantha P. Roberts, M. Mehregany, M. Ohadi
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引用次数: 24

摘要

本文介绍了一种用于碳化硅(SiC)衬底上高热流密度电子器件的两相嵌入式冷却系统的实验结果。该系统采用薄膜蒸发和增强型流体输送系统(FEEDS)歧管-微通道(MMC)冷却器。由于碳化硅具有理想的电学和热学性能,基于碳化硅的大功率电子器件正在获得发展势头。例如,单晶SiC的导热系数超过350w /m-K,是硅的数倍。因此,通过在衬底上蚀刻深沟(宽高比约为5)微通道,制备了FEEDS MMC冷却器并将其嵌入到SiC衬底上。以往在硅上的FEEDS MMC的研究中,在30℃饱和温度下,R245fa在45%蒸汽质量下达到了1 kW/cm2以上的高热流密度。相比之下,这里的SiC器件表现出更好的热性能,表现出1 kW/cm2的冷却和高达~ 85%的出口蒸汽质量。在进行两相测试之前,系统还进行了单相模式测试,通过与CFD模拟的比较来验证系统性能。文中还讨论了碳化硅沟道的微加工。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Embedded two-phase cooling of high heat flux electronics on silicon carbide (SiC) using thin-film evaporation and an enhanced delivery system (FEEDS) manifold-microchannel cooler
This work presents experimental results of a two-phase, embedded cooling system for high heat flux electronics on silicon carbide (SiC) substrates. The system uses a thin-Film Evaporation and Enhanced fluid Delivery System (FEEDS) Manifold-Microchannel (MMC) cooler. SiC-based high power electronics are gaining momentum due to SiC's desirable electrical and thermal performance. For example, single-crystalline SiC shows thermal conductivities exceeding 350 W/m-K, which is several times higher than that of silicon. Accordingly, FEEDS MMC coolers were fabricated and embedded onto SiC substrates by etching deep-trench (with aspect ratios around 5) microchannels into the substrates. Previous studies on FEEDS MMC on silicon have reached high heat fluxes above 1 kW/cm2 at 45% vapor quality with R245fa at 30°C saturation temperature. In comparison, the SiC devices here show better thermal performance, exhibiting cooling of 1 kW/cm2 and up to ∼85% exit vapor quality. The system was also tested with single-phase mode to validate system performance via comparison to CFD simulations, before two-phase tests were performed. Microfabrication of the SiC channels are also discussed.
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