用于电动汽车快速充电器的SiC沟槽mosfet DC-DC变换器的设计

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI:10.1109/WiPDAAsia49671.2020.9360254

O. Karimzada, Takayuki Uchida, T. Masuda, Y. Mori, A. Shima, G. Donato

{"title":"用于电动汽车快速充电器的SiC沟槽mosfet DC-DC变换器的设计","authors":"O. Karimzada, Takayuki Uchida, T. Masuda, Y. Mori, A. Shima, G. Donato","doi":"10.1109/WiPDAAsia49671.2020.9360254","DOIUrl":null,"url":null,"abstract":"Recent increased demand in high power density and high-efficiency converters for EV charging makes wide bandgap semiconductors, particularly silicon carbide (SiC), excellent candidates of choice to meet this demand. This paper presents a step-down DC-DC converter using trench SiC MOS made by HITACHI for EV ultra-fast charging. It compares the efficiency and performance of the converter with IGBT and other SiC transistors. In all cases, it shows the clear advantage of the trench etched MOS over alternatives.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design of a DC-DC Converter using SiC Trench MOSFETs for EV Fast Chargers\",\"authors\":\"O. Karimzada, Takayuki Uchida, T. Masuda, Y. Mori, A. Shima, G. Donato\",\"doi\":\"10.1109/WiPDAAsia49671.2020.9360254\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent increased demand in high power density and high-efficiency converters for EV charging makes wide bandgap semiconductors, particularly silicon carbide (SiC), excellent candidates of choice to meet this demand. This paper presents a step-down DC-DC converter using trench SiC MOS made by HITACHI for EV ultra-fast charging. It compares the efficiency and performance of the converter with IGBT and other SiC transistors. In all cases, it shows the clear advantage of the trench etched MOS over alternatives.\",\"PeriodicalId\":432666,\"journal\":{\"name\":\"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WiPDAAsia49671.2020.9360254\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360254","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

最近对电动汽车充电的高功率密度和高效率转换器的需求增加，使得宽禁带半导体，特别是碳化硅(SiC)，成为满足这一需求的绝佳选择。本文介绍了一种用于电动汽车超快充电的降压式直流-直流变换器。并与IGBT和其他碳化硅晶体管的效率和性能进行了比较。在所有情况下，它显示了壕沟蚀刻MOS相对于其他选择的明显优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design of a DC-DC Converter using SiC Trench MOSFETs for EV Fast Chargers

Recent increased demand in high power density and high-efficiency converters for EV charging makes wide bandgap semiconductors, particularly silicon carbide (SiC), excellent candidates of choice to meet this demand. This paper presents a step-down DC-DC converter using trench SiC MOS made by HITACHI for EV ultra-fast charging. It compares the efficiency and performance of the converter with IGBT and other SiC transistors. In all cases, it shows the clear advantage of the trench etched MOS over alternatives.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

自引率

0.00%

发文量