深亚微米N和p沟道部分耗尽和完全耗尽单键和SIMOX mosfet中热载子效应的比较

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI:10.1109/RELPHY.1998.670545

S. Renn, C. Raynaud, J. Pelloie, F. Balestra

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引用次数: 8

摘要

本文对深亚微米N沟道和p沟道SOI mosfet中的热载子效应进行了深入研究。为了全面评估SOI技术的可靠性，提出了以下研究:(i)比较SIMOX和单键mosfet中的热载子效应;(ii)评估完全耗尽和部分耗尽设备的热载流子抗扰度;(iii) N沟道和p沟道晶体管的退化分析;(四)衰老/恢复机制的研究。

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Comparison of hot-carrier effects in deep submicron N- and P-channel partially- and fully-depleted Unibond and SIMOX MOSFETs

A thorough investigation on hot-carrier effects in deep submicron N- and P-channel SOI MOSFETs is reported in this paper. The following studies are presented in order to thoroughly assess the reliability of SOI technologies: (i) comparison of hot-carrier effects in SIMOX and Unibond MOSFETs; (ii) evaluation of the hot-carrier immunity of fully and partially depleted devices; (iii) analysis of the degradation in N- and P-channel transistors; and (iv) investigation of the aging/recovery mechanisms.

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来源期刊

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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