单片混频器采用mesfet技术，在C和V波段之间进行上下转换

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI:10.1109/MCS.1995.470966

J. P. Torres, F. Fortes, M. Joao Rosario, J. Dieudonné, J. Costa Freire

{"title":"单片混频器采用mesfet技术，在C和V波段之间进行上下转换","authors":"J. P. Torres, F. Fortes, M. Joao Rosario, J. Dieudonné, J. Costa Freire","doi":"10.1109/MCS.1995.470966","DOIUrl":null,"url":null,"abstract":"In this paper the design of singly balanced mixers to convert C to V band signals are presented. A step by step design technique is described, based on harmonic balance simulations. The mixer devices are Schottky diodes compatible with a GaAs MESFET technology. The mixer was optimised for minimum conversion losses on the widest possible bandwidth when used as an up or downconverter in order to be used on a large number of applications. The experiments show a minimum conversion losses on the range of 6 to 8 dB for both applications (up and downconverter) and a 3 dB bandwidth larger then 6 GHz.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Monolithic mixers with MESFETs technology to up and down convert between C and V band\",\"authors\":\"J. P. Torres, F. Fortes, M. Joao Rosario, J. Dieudonné, J. Costa Freire\",\"doi\":\"10.1109/MCS.1995.470966\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the design of singly balanced mixers to convert C to V band signals are presented. A step by step design technique is described, based on harmonic balance simulations. The mixer devices are Schottky diodes compatible with a GaAs MESFET technology. The mixer was optimised for minimum conversion losses on the widest possible bandwidth when used as an up or downconverter in order to be used on a large number of applications. The experiments show a minimum conversion losses on the range of 6 to 8 dB for both applications (up and downconverter) and a 3 dB bandwidth larger then 6 GHz.<<ETX>>\",\"PeriodicalId\":325779,\"journal\":{\"name\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1995.470966\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了一种将C波段信号转换为V波段信号的单平衡混频器的设计。介绍了一种基于谐波平衡仿真的分步设计技术。混频器器件是与GaAs MESFET技术兼容的肖特基二极管。混频器被优化为最小的转换损失在最宽的可能的带宽，当用作一个上行或下行转换器，以便在大量的应用中使用。实验表明，两种应用(上行和下行转换器)的最小转换损耗范围为6至8 dB，带宽比6 GHz大3 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Monolithic mixers with MESFETs technology to up and down convert between C and V band

In this paper the design of singly balanced mixers to convert C to V band signals are presented. A step by step design technique is described, based on harmonic balance simulations. The mixer devices are Schottky diodes compatible with a GaAs MESFET technology. The mixer was optimised for minimum conversion losses on the widest possible bandwidth when used as an up or downconverter in order to be used on a large number of applications. The experiments show a minimum conversion losses on the range of 6 to 8 dB for both applications (up and downconverter) and a 3 dB bandwidth larger then 6 GHz.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

自引率

0.00%

发文量