用于自主无线传感器网络接口的低功耗12位SAR ADC

D. De Venuto, D. Castro, Youri Ponomarev, E. Stikvoort
{"title":"用于自主无线传感器网络接口的低功耗12位SAR ADC","authors":"D. De Venuto, D. Castro, Youri Ponomarev, E. Stikvoort","doi":"10.1109/IWASI.2009.5184780","DOIUrl":null,"url":null,"abstract":"Design strategies for power effective and high resolution Successive-Approximation ADCs for autonomous multi-sensor systems are discussed. Specifically, an optimisation for lowest possible power consumption of comparators is addressed and evaluated using both simulations and measurements of a fabricated Si test-chip. The proposed design solution is capable to provide a 12-bit resolution at 50-kHz with only 0.1uW power consumption on a 1.2-V supply. The achieved Figure-of-Merit is 165 ƒJ/convertion-step is, to our knowledge, the best ever reported. The complete ADC area is 0.35 mm2 in NXP 0.14um CMOS technology with only three metal layers.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"400 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"Low power 12-bit SAR ADC for autonomous wireless sensors network interface\",\"authors\":\"D. De Venuto, D. Castro, Youri Ponomarev, E. Stikvoort\",\"doi\":\"10.1109/IWASI.2009.5184780\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design strategies for power effective and high resolution Successive-Approximation ADCs for autonomous multi-sensor systems are discussed. Specifically, an optimisation for lowest possible power consumption of comparators is addressed and evaluated using both simulations and measurements of a fabricated Si test-chip. The proposed design solution is capable to provide a 12-bit resolution at 50-kHz with only 0.1uW power consumption on a 1.2-V supply. The achieved Figure-of-Merit is 165 ƒJ/convertion-step is, to our knowledge, the best ever reported. The complete ADC area is 0.35 mm2 in NXP 0.14um CMOS technology with only three metal layers.\",\"PeriodicalId\":246540,\"journal\":{\"name\":\"2009 3rd International Workshop on Advances in sensors and Interfaces\",\"volume\":\"400 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 3rd International Workshop on Advances in sensors and Interfaces\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWASI.2009.5184780\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 3rd International Workshop on Advances in sensors and Interfaces","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWASI.2009.5184780","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 30

摘要

讨论了用于自主多传感器系统的功率有效和高分辨率逐次逼近adc的设计策略。具体来说,通过模拟和测量制造的硅测试芯片,对比较器的最低功耗进行了优化和评估。提出的设计方案能够在50 khz下提供12位分辨率,在1.2 v电源下仅消耗0.1uW功耗。实现的绩效指数为165 ƒJ/转换-据我们所知,这是有史以来报道的最佳步骤。在NXP 0.14um CMOS技术中,整个ADC面积为0.35 mm2,只有三个金属层。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low power 12-bit SAR ADC for autonomous wireless sensors network interface
Design strategies for power effective and high resolution Successive-Approximation ADCs for autonomous multi-sensor systems are discussed. Specifically, an optimisation for lowest possible power consumption of comparators is addressed and evaluated using both simulations and measurements of a fabricated Si test-chip. The proposed design solution is capable to provide a 12-bit resolution at 50-kHz with only 0.1uW power consumption on a 1.2-V supply. The achieved Figure-of-Merit is 165 ƒJ/convertion-step is, to our knowledge, the best ever reported. The complete ADC area is 0.35 mm2 in NXP 0.14um CMOS technology with only three metal layers.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信