基于0.13-µm SiGe BiCMOS的增强太赫兹片上天线的增益和辐射效率

Yuyuan Fan, Sheng Xie, Yu Luo, Kaixue Ma
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引用次数: 1

摘要

本文提出了一种提高增益和辐射效率的340GHz片上天线。在所提出的片上天线中,在基板集成波导(SIW)的上壁上蚀刻一个矩形槽环路。SIW结构与辐射体形成1/4波长谐振腔,将电磁波反射回辐射体。多点送料显著提高辐射效率。采用标准的0.13-µm SiGe BiCMOS工艺进行设计和优化,并与普通贴片天线进行比较。仿真结果表明,增益和辐射效率均有提高,增益为5.41dBi,在340GHz时的辐射效率约为49.7%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gain and Radiation Efficiency Enhance Terahertz On-Chip Antenna Based on 0.13-µm SiGe BiCMOS
This paper proposes a 340GHz on-chip antenna with enhanced gain and radiation efficiency. In the proposed on-chip antenna, a rectangle slot loop is etched in the upper wall of a substrate integrated waveguide (SIW). The SIW structure forms a 1/4 wavelength resonant cavity with the radiator, reflecting electromagnetic waves back to the radiator. Multi-point feeding significantly improves Radiation efficiency. Designed and optimized using a standard 0.13-µm SiGe BiCMOS process and compared with ordinary patch antenna. The simulation results show that both gain and radiation efficiency are improved, the gain is 5.41dBi, and the radiation efficiency is about 49.7% at 340GHz.
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