一阶双极模型在HBT谐波畸变分析中的应用

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303093

B. Meskoob, S. Prasad

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引用次数: 1

摘要

虽然GaAs mesfet的大信号模型已经得到了广泛的发展，但对于异质结双极晶体管(HBT)来说，情况并非如此。采用基于一阶器件物理的一阶模型对InGaAs/InAlAs/InP倒置HBT进行了谐波畸变分析。结果表明，一阶模型在中等功率水平下是合适的，而在高功率水平下则不合适，此时器件被驱动到硬饱和和截止。

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Application of the first-order bipolar model to harmonic distortion analysis of HBT's

Although large-signal models for GaAs MESFETs have been developed extensively, the same is not true for heterojunction bipolar transistors (HBT's). A first-order model, based on first-order device physics, is used for harmonic distortion analysis of an InGaAs/InAlAs/InP inverted HBT. It is shown that the first-order model is adequate at medium power levels and inadequate at higher power levels where the device is driven into hard saturation and cutoff.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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