A new set of electrical test structures for simultaneous single-wafer monitoring of ion implant shadowing, channeling, and dose uniformity

A set of novel ion implant electrical test structures designed to measure shadowing channeling, and dose uniformity effects for the purpose of implanter calibration and evaluation has been designed and integrated onto one wafer, permitting the simultaneous monitoring of these effects in a single implant. The mask set has been designed so that it can be used in monitoring either p-type or n-type implants. It has been possible to fabricate eight different structures on a single wafer using only six mask levels. Results of experiments using these structures are presented and discussed.<>