基于SRAM的无线体域网络低功耗泛在传感器设计

Kumari Neeraj, M. M. Basha, Srinivasulu Gundala
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引用次数: 3

摘要

智能无处不在的传感器已部署在无线体域网络中,以改善数字医疗保健服务。近年来,随着对计算能力要求的急剧提高,无线体域网络对基于静态ram的低功耗泛在传感器的设计提出了很高的要求。然而,SRAM单元越来越容易受到软误差,由于供电电压不足。本文的主要目的是为医疗保健应用设计一种基于SRAM的低功耗泛在传感器。设计/方法/方法在这项工作中,偏置温度不稳定性被认为是SRAM设计中的重要问题。为了消除软误差和偏置温度不稳定问题,提出了一种电平移位电路。在最近的SRAM设计中,为了最大限度地减少退化,关注了偏置温度不稳定性。与现有的SRAM设计相比,本文提出的基于finfet的SRAM在延迟、功耗和静态噪声裕度方面取得了更好的结果。生物医学应用中的身体区域网络需要低功耗无处不在的传感器来提高电池寿命。所提出的基于sram的低功耗无处不在传感器适用于便携式医疗保健设备。在无线体域网络中,基于sram的低功耗无处不在传感器的设计至关重要。该设计既节能又克服了偏置温度不稳定性的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of low power SRAM- based ubiquitous sensor for wireless body area networks
Purpose Smart ubiquitous sensors have been deployed in wireless body area networks to improve digital health-care services. As the requirement for computing power has drastically increased in recent years, the design of low power static RAM-based ubiquitous sensors is highly required for wireless body area networks. However, SRAM cells are increasingly susceptible to soft errors due to short supply voltage. The main purpose of this paper is to design a low power SRAM- based ubiquitous sensor for healthcare applications. Design/methodology/approach In this work, bias temperature instabilities are identified as significant issues in SRAM design. A level shifter circuit is proposed to get rid of soft errors and bias temperature instability problems. Findings Bias Temperature Instabilities are focused on in recent SRAM design for minimizing degradation. When compared to the existing SRAM design, the proposed FinFET-based SRAM obtains better results in terms of latency, power and static noise margin. Body area networks in biomedical applications demand low power ubiquitous sensors to improve battery life. The proposed low power SRAM-based ubiquitous sensors are found to be suitable for portable health-care devices. Originality/value In wireless body area networks, the design of low power SRAM-based ubiquitous sensors are highly essential. This design is power efficient and it overcomes the effect of bias temperature instability.
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