封装基板对射频集成电路影响的建模与仿真

C. Benedik, S. Ren
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引用次数: 0

摘要

本文分析了集成电路封装衬底对射频(RF) IC的影响。在射频频率下,当在封装中组装射频系统(SiP)或将单个芯片与封装集成时,封装寄生的影响变得至关重要。差分缓冲器,先前已在一个90纳米的CMOS工艺制造,作为载体,分析封装对性能的影响。对缓冲模与封装的集成进行了建模和分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling and simulation of packaging substrate effects on radio frequency integrated circuits
In this paper an analysis of the effects of integrated circuit packaging substrates on a radio frequency (RF) IC is presented. At RF frequencies the effects of packaging parasitics become crucial when assembling an RF system in package (SiP) or integrating a single die with a package. A differential buffer, which had been previously fabricated in a 90nm CMOS process is used as a vehicle to analyze the effects of packaging on performance. The integration of the buffer die with the package is modeled and analyzed.
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