A new mobility model for circuit simulation in pocket implanted MOSFET's

A new analytical, physical-based effective mobility model valid in all regimes of device operation from weak to strong inversion together with an extraction method and corresponding test structures is introduced. The model accounts for the influence of the electrical field as well as for the lateral non-uniform doping profile in pocket implanted MOSFET's. Measurements show that the high local channel doping in the pocket implanted regions makes the mobility degradation due to Coulomb scattering with ionized dopants no longer negligible especially for low gate bias voltage thus for low voltage circuit design.