{"title":"用暗场全息显微镜进行相位分辨半导体叠加计量","authors":"V. Tenner, C. Messinis, A. Boef","doi":"10.1364/DH.2019.M4B.7","DOIUrl":null,"url":null,"abstract":"Current optical sensors used for overlay metrology during semiconductor manufacturing are limited on the available stack-thickness wavelength combinations. We present a dark field holographic sensor concept that lifts this limitation and show an experimental demonstration.","PeriodicalId":448778,"journal":{"name":"Digital Holography and Three-Dimensional Imaging 2019","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Phase-resolved semiconductor overlay metrology with a dark field holographic microscope\",\"authors\":\"V. Tenner, C. Messinis, A. Boef\",\"doi\":\"10.1364/DH.2019.M4B.7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Current optical sensors used for overlay metrology during semiconductor manufacturing are limited on the available stack-thickness wavelength combinations. We present a dark field holographic sensor concept that lifts this limitation and show an experimental demonstration.\",\"PeriodicalId\":448778,\"journal\":{\"name\":\"Digital Holography and Three-Dimensional Imaging 2019\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digital Holography and Three-Dimensional Imaging 2019\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/DH.2019.M4B.7\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digital Holography and Three-Dimensional Imaging 2019","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/DH.2019.M4B.7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Phase-resolved semiconductor overlay metrology with a dark field holographic microscope
Current optical sensors used for overlay metrology during semiconductor manufacturing are limited on the available stack-thickness wavelength combinations. We present a dark field holographic sensor concept that lifts this limitation and show an experimental demonstration.
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