AlGas/GaAs高温超导的瞬态电热模型

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493705

I.A.D. Russell, P. Webb, R. G. Davis

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引用次数: 3

摘要

本文描述了功率瞬态过程中AlGaAs/GaAs异质结双极晶体管(HBTs)电流和温度分布的自一致仿真。为此目的所采用的建模技术是基于HBT手指的离散等效电路模型，通过将传输线矩阵(TLM)热扩散模拟器与标准电路模拟器SPICE相结合来实现的。本文给出了该模型的形式，并举例说明了仿真系统在深入了解与AlGaAs/GaAs HBT相关的许多电热相关现象方面的实用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transient electro-thermal modelling of AlGas/GaAs HBTs

This paper describes the self-consistent simulation of the current and temperature distributions within AlGaAs/GaAs heterojunction bipolar transistors (HBTs) during power transients. The modelling technique employed for this purpose, which has been implemented by combining a transmission line matrix (TLM) thermal diffusion simulator with The standard circuit simulator SPICE, is based on a discretised equivalent circuit model of an HBT finger. The form of this model is presented, along with examples that illustrate the utility of the simulation system in providing insight into a number of electro-thermally related phenomena associated with the AlGaAs/GaAs HBT.

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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