利用拉曼光谱和纳米压痕表征双光子聚合光刻结构

Severin Schweiger, Tim Schulze, S. Schlipf, P. Reinig, H. Schenk
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引用次数: 4

摘要

摘要利用双光子聚合(TPP)光刻技术进行增材制造在工业和科研领域的应用越来越广泛。研究了跨激光功率和扫描速度参数的TPP光刻长方体结构的参数扫描,以找出与材料力学性能相关的参数。利用拉曼光谱检测光刻胶单体到聚合物的转化度(DC),随后利用微压痕或纳米压痕计算杨氏模量(E)。对于光刻胶IP-Dip,获得的DC和E分别在20%至45%和1至2.1 GPa之间。结果与文献中发现的报告进行比较。对于IP-Q,获得的DC和E分别在53% ~ 80%和0.5 ~ 1.3 GPa之间。IP-Q的特征属性体现了对该材料的当前知识状态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of two-photon-polymerization lithography structures via Raman spectroscopy and nanoindentation
Abstract. Additive manufacturing using two-photon polymerization (TPP) lithography is increasingly used in industry and research. Parameter sweeps of cuboid structures fabricated using TPP lithography were investigated across the parameters of the laser power and scan speed to find dependent mechanical material properties. The employed photoresists were examined using Raman spectroscopy to find the degree of conversion (DC) of monomer to polymer, and subsequently, micro- or nanoindentation was used to find Young’s modulus (E). For the photoresist IP-Dip, the attained DC and E ranged from 20% to 45% and 1 to 2.1 GPa, respectively. The results were compared with reports found in the literature. For IP-Q, the attained DC and E ranged from 53% to 80% and 0.5 to 1.3 GPa, respectively. The characterized properties of IP-Q manifest as the current state of knowledge of the material.
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