基于AlGaN固溶体的紫外光电二极管欧姆和整流触点

2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW) Pub Date : 2015-02-01 DOI:10.1109/EICONRUSNW.2015.7102221

M. Andreev, I. Lamkin, S. Tarasov, I. I. Mikhailov, A. Solomonov

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引用次数: 1

摘要

提出了一种热真空蒸发和真空进一步退火制备Ti/Al触点的工艺。制备并研究了si掺杂AlxGa1-xN外延层(x = 0.08 ~ 0.7, n = 1.7·1019 cm-3)的触点。利用等离子体辅助MBE和HVPE (x = 0.1, n = 1016 ~ 1019)在c-蓝宝石衬底上生长了掺硅外延层。Al0.5Ga0.5N样品的接触电阻为8·10-5 Ω·cm2。用俄歇能谱法研究了金属原子退火后的重分布。

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Ohmic and rectifying contacts for ultraviolet photodiode based on AlGaN solid solutions

A technology of Ti/Al contacts using thermal vacuum evaporation and further annealing in vacuum wasproposed. Contacts for Si-doped Al_xGa_1-xN epitaxial layers (x = 0.08 - 0.7, n = 1.7 · 10¹⁹ cm^-3) were fabricated and investigated. The Si-doped epitaxial layers were grown by plasma-assisted MBE and HVPE (x = 0.1, n = 10¹⁶ - 10¹⁹) on c-sapphire substrates. The contact resistance of 8 · 10^-5 Ω· cm² was achieved for the Al_0.5Ga_0.5N sample. Auger electron spectroscopy was used to study redistribution of metal atoms after annealing.

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2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

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