用于p型和n型OFET的活性功能聚合物的开发

S. Janietz, D. Sainova, U. Asawapirom
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摘要

本文提出了一种通过在主聚合物链中引入强受体掺杂剂来提高P3HT场效应晶体管在阈值电压稳定性和环境气氛稳定性方面的性能的概念。在我们的概念中,在聚合物主链中直接引入受体掺杂剂确保了结构在扩散过程中的稳定性。采用McCullough - Grignard复分解法合成了具有不同受体分子含量的p3ht,这些分子固定连接在聚合物的主链上。以四氟苯(TFB)为受体单元。为了在聚合物的可加工性和所得到的晶体管性能之间获得最佳,所引入的掺杂量已被改变。与p型半导体聚合物相比,n型有机材料明显不够发达。最近提出了一种有趣的解决方案,以共轭阶梯型聚苯并双咪唑苯并菲罗啉(BBL)的形式显示出双极性或n型场效应性质,这取决于样品的制备和处理。然而,这种硬链阶梯聚合物不溶于普通有机溶剂,导致相当复杂的技术转移。我们报告了利用水性胶体分散体及其ofet应用的bbl处理的显着改进。所得到的器件显示出双极性电子输运,载流子迁移率在10-5cm2/Vs范围内,无需特定的优化程序。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of Active Functional Polymers for p- and n-type OFET- Applications
Here we present a concept to improve the field effect transistor performance of P3HT in terms of threshold voltage stability as well as the stability in ambient atmosphere by introducing a strong acceptor dopant in the main polymer chain. In our concept the direct introduction of the acceptor dopant in the polymer main chain ensures the strucural stability against diffusion processes. P3HTs with different contents of acceptor molecules which are fixed linked in the main chain of the polymer, have been synthesized using the McCullough Grignard metathesis method. As acceptor unit has been integrated tetrafluorbenzene (TFB). The introduced dopant amount has been varied in order to obtain an optimum between the processability of the polymers and the resultant transistor performance. Compared to the p-type semionducting polymers the n-type organic materials are markedly less developed. Recently an interesting solution to this task has been proposed in the form of a conjugated ladder-type poly(benzo-bisimidazobenzo-phenanthroline) (BBL) showing either ambipolar or n-type field effect properties dependent upon the sample preparation and processing. However this rigid-chain ladder polymer is not soluble in the common organic solvents resulting in a rather complicated technological transfer. We report the significant improvement of the BBL-processing utilizing aqueous colloidal dispersions and their OFET-application. The resultant devices demonstrate ambipolar electronic transport with charge carrier mobilities in the range of 10-5cm2/Vs without specific optimization procedures.
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