{"title":"砷化镓衬底上的四极椭圆带通滤波器","authors":"M. Salehi, E. Abiri, Shahamat Kohan, Hadi Bashiri","doi":"10.1109/IEEEGCC.2011.5752523","DOIUrl":null,"url":null,"abstract":"In this paper a novel result for phase noise oscillator is presented. A four pole elliptic band pass filter is used to decrease the phase noise. The phase noise oscillator with RT/Duroid 5880 substrate with ∊<inf>r</inf> = 2.2, h = 31 mil at offset frequencies 100 KHz and 1 MHz is equal to −122 and −140 dBc/Hz, respectively, and is −128 and −146 dBc/Hz for GaAs substrate with ∊<inf>r</inf> = 12.90 and h = 100 μ m in the same frequencies, respectively. The loss for GaAs sabstrate is less than an RT/Duroid 5880 substrate. The phase noise is improved for GaAs in comparison to RT/Duroid 5880 substrate about 6 dBc at 100KHz and 1MHz offset frequencies.","PeriodicalId":119104,"journal":{"name":"2011 IEEE GCC Conference and Exhibition (GCC)","volume":"373 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Four pole elliptic band pass filter on GaAs substrate\",\"authors\":\"M. Salehi, E. Abiri, Shahamat Kohan, Hadi Bashiri\",\"doi\":\"10.1109/IEEEGCC.2011.5752523\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a novel result for phase noise oscillator is presented. A four pole elliptic band pass filter is used to decrease the phase noise. The phase noise oscillator with RT/Duroid 5880 substrate with ∊<inf>r</inf> = 2.2, h = 31 mil at offset frequencies 100 KHz and 1 MHz is equal to −122 and −140 dBc/Hz, respectively, and is −128 and −146 dBc/Hz for GaAs substrate with ∊<inf>r</inf> = 12.90 and h = 100 μ m in the same frequencies, respectively. The loss for GaAs sabstrate is less than an RT/Duroid 5880 substrate. The phase noise is improved for GaAs in comparison to RT/Duroid 5880 substrate about 6 dBc at 100KHz and 1MHz offset frequencies.\",\"PeriodicalId\":119104,\"journal\":{\"name\":\"2011 IEEE GCC Conference and Exhibition (GCC)\",\"volume\":\"373 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE GCC Conference and Exhibition (GCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEEGCC.2011.5752523\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE GCC Conference and Exhibition (GCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEEGCC.2011.5752523","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Four pole elliptic band pass filter on GaAs substrate
In this paper a novel result for phase noise oscillator is presented. A four pole elliptic band pass filter is used to decrease the phase noise. The phase noise oscillator with RT/Duroid 5880 substrate with ∊r = 2.2, h = 31 mil at offset frequencies 100 KHz and 1 MHz is equal to −122 and −140 dBc/Hz, respectively, and is −128 and −146 dBc/Hz for GaAs substrate with ∊r = 12.90 and h = 100 μ m in the same frequencies, respectively. The loss for GaAs sabstrate is less than an RT/Duroid 5880 substrate. The phase noise is improved for GaAs in comparison to RT/Duroid 5880 substrate about 6 dBc at 100KHz and 1MHz offset frequencies.
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