SOI衬底单片InGaAs/InP MQW纳米激光器

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA) Pub Date : 2019-11-11 DOI:10.1364/isst.2019.jth4e.6

Yajie Li, Wenyu Yang, Shi‐Man Du, Xuliang Zhou, Mengqi Wang, Hongyan Yu, Yejin Zhang, Jiao-qing Pan

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引用次数: 4

摘要

我们报道了光泵浦InGaAs/InP MQW纳米激光器直接生长在SOI衬底上，通过蚀刻掉纳米线两侧的部分顶部Si来减少光泄漏损耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Monolithic InGaAs/InP MQW Nanolasers on SOI Substrate

We report the optical pumped InGaAs/InP MQW nanolasers directly grown on the SOI substrate after etching away part top Si on both sides of the nanowires to reduce the optical leakage loss.

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International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA)

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