Ming-Chun Hong, Yao-Jen Chang, Y. Hsin, Liang-Ming Liu, Kuan-Ming Chen, Yi-Hui Su, Guan-Long Chen, Shan-Yi Yang, I. Wang, S. Z. Rahaman, Hsin-Han Lee, Shih-Ching Chiu, Chen-Yi Shih, Chih-Yao Wang, Fang-Ming Chen, Jeng-Hua Wei, S. Sheu, W. Lo, Minn-Tsong Lin, Chih-I Wu, T. Hou
{"title":"4K-400K宽工作温度范围MRAM技术,超薄复合自由层和镁间隔层","authors":"Ming-Chun Hong, Yao-Jen Chang, Y. Hsin, Liang-Ming Liu, Kuan-Ming Chen, Yi-Hui Su, Guan-Long Chen, Shan-Yi Yang, I. Wang, S. Z. Rahaman, Hsin-Han Lee, Shih-Ching Chiu, Chen-Yi Shih, Chih-Yao Wang, Fang-Ming Chen, Jeng-Hua Wei, S. Sheu, W. Lo, Minn-Tsong Lin, Chih-I Wu, T. Hou","doi":"10.1109/vlsitechnologyandcir46769.2022.9830503","DOIUrl":null,"url":null,"abstract":"A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 4K–400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer\",\"authors\":\"Ming-Chun Hong, Yao-Jen Chang, Y. Hsin, Liang-Ming Liu, Kuan-Ming Chen, Yi-Hui Su, Guan-Long Chen, Shan-Yi Yang, I. Wang, S. Z. Rahaman, Hsin-Han Lee, Shih-Ching Chiu, Chen-Yi Shih, Chih-Yao Wang, Fang-Ming Chen, Jeng-Hua Wei, S. Sheu, W. Lo, Minn-Tsong Lin, Chih-I Wu, T. Hou\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4K–400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer
A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).